eGaN® FET Electrical Characteristics
In this paper the basic electrical characteristics of eGaN FETs are explained and compared against silicon MOSFETs. A good understanding of the similarities and differences between these two technologies is a necessary foundation for understanding how much we can improve existing power conversion systems.
Every semiconductor has a limit to its capabilities. These limits are typically expressed prominently in a device data sheet and serve as a guide to designers as to how to create designs that do not have hidden quality or reliability issues.
Download this whitepaper to learn more.
Read More
By submitting this form you agree to Efficient Power Conversion Corporation (EPC) contacting you with marketing-related emails or by telephone. You may unsubscribe at any time. Efficient Power Conversion Corporation (EPC) web sites and communications are subject to their Privacy Notice.
By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email dataprotection@techpublishhub.com
Related Categories: Power
More resources from Efficient Power Conversion Corporation (EPC)
eGaN® FET Drivers and Layout Considerations
When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gat...
eGaN® FETs in High Frequency Resonant Converters
In this white paper eGaN FET technology is applied in a high frequency resonant converter. Previously, the advantages provided by eGaN FETs in hard...
Selecting eGaN® FET Optimal On-Resistance
Previously published articles showed that eGaN FETs behave for the most part just like silicon devices and can be evaluated using similar performan...
