eGaN® FETs and ICs for 48 V-12 V Regulated Brick Converters
Unregulated performance in a regulated design delivers unprecedented power density.
Low QOSS, zero QRR and low QGD, along with low inductance and low resistance, are the keys to the eGaN FET's advantage in hard switched converters.
EPC's eGaN FETs and ICs enable 500 W 1/8th brick DC-DC converters.
Download this whitepaper to learn more.
Read More
By submitting this form you agree to Efficient Power Conversion Corporation (EPC) contacting you with marketing-related emails or by telephone. You may unsubscribe at any time. Efficient Power Conversion Corporation (EPC) web sites and communications are subject to their Privacy Notice.
By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email dataprotection@techpublishhub.com
Related Categories: Power
More resources from Efficient Power Conversion Corporation (EPC)
Improve DC-DC Forward Converter Efficiency with eGaN FETs
DC-DC converter designers can achieve higher power density at lower power levels by using forward converters with synchronous rectification and gal...
Gallium Nitride (GaN) Technology Overview
For over three decades, power management efficiency and cost showed steady improvement as innovations in power MOSFET structures, technology, and c...
Benchmark DC-DC Conversion Efficiency with eGaN FET-Based Buck Converters
For applications requiring high power density and high power, but not requiring electrical isolation, the buck converter has been the workhorse top...
